IGC70T120T8RQ

$12.56

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-

SKU:c9d3a679ba92 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.42V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IGC70T120T8RQ

Overview

The IGC70T120T8RQ is a bare die TRENCHSTOP™ IGBT4 High Speed Chip manufactured by Infineon Technologies. It utilizes 1200V trench and field stop technology to achieve low switching losses and a positive temperature coefficient for easy paralleling. The chip features a collector-emitter voltage (VCE) of 1200 V, a nominal DC collector current (ICn) of 75 A at TC=100°C, and a pulsed collector current (IC,puls) of 225 A. The typical collector-emitter saturation voltage (VCEsat) is 1.78 V at Tvj=25°C and 75 A. The die size measures 9.12 mm x 7.71 mm with a thickness of 115 µm.

Feature Summary

Utilizes 1200V trench and field stop technology for optimized performance.
Features low switching losses suitable for high-frequency applications.
Positive temperature coefficient enables easy paralleling in power modules.

Applications

High frequency drives
Uninterruptible power supplies
Welding equipment
Solar inverters

Procurement Notes

Verify the specific package suffix (L7673S or L7673Q) required for your assembly process. Confirm that the component meets industrial standards rather than automotive qualifications like AEC-Q100/Q101. Ensure storage conditions adhere to IEC 62258-3 guidelines for moisture sensitivity management before soldering.

Selection Notes

Select this bare die for custom module designs requiring high-speed switching capabilities. Consider the 115 µm thickness and 9.12 x 7.71 mm dimensions for thermal interface compatibility. Evaluate the need for an integrated gate resistor, which is specified at 10 Ω, to manage switching dynamics effectively in your target application circuit.

Part Context

This component belongs to Infineon's TRENCHSTOP™ IGBT4 family, designed for industrial power control applications. It serves as a semiconductor chip intended for integration into larger power modules rather than standalone discrete components. The product line emphasizes efficiency and reliability for medium-power industrial systems.

Replacement Considerations

Consult official Infineon documentation for direct cross-references. Verify electrical parameters such as VCE, IC, and VCEsat against alternative bare dies. Ensure mechanical dimensions and pad configurations match existing module footprints to maintain assembly integrity.