IGC99T120T8RQX7SA1

Description：IGBT TRENCH FIELD STOP 1200V
Series：TrenchStop™

SKU:f60ca10051f5 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 1200V
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.42V @ 15V, 100A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

IGC99T120T8RQX7SA1

Overview

The IGC99T120T8RQX7SA1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Trench Field Stop technology and features a maximum collector-emitter breakdown voltage of 1200 V. The device supports a pulsed collector current of 300 A. This component is classified as an active discrete semiconductor product.

Feature Summary

Incorporates Trench Field Stop technology for optimized switching performance
Designed as a single discrete IGBT module
Rated for high-voltage applications with 1200 V breakdown capability

Applications

Industrial motor drives
Power supply units
Inverter circuits

Procurement Notes

Verify the specific package type and thermal characteristics against the official datasheet before integration. Confirm that the Trench Field Stop architecture aligns with the target application's switching frequency requirements. Ensure compatibility with existing gate drive circuitry for the 1200 V rating.

Selection Notes

Select this component when a single IGBT with 1200 V blocking capability and 300 A pulsed current handling is required. The Trench Field Stop technology offers advantages in switching losses compared to standard field stop structures. Evaluate thermal management needs based on the die configuration.

Part Context

This part belongs to Infineon's portfolio of power semiconductors, specifically within the IGBT category. It serves as a key switching element in medium to high-power electronic systems. The manufacturer provides technical documentation detailing electrical limits and thermal performance parameters.

Replacement Considerations

Consult official substitution lists for equivalent Trench Field Stop IGBTs with matching 1200 V and current ratings. Verify pinout and package dimensions to ensure mechanical compatibility during replacement.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.