IGD03N120S7ATMA1

$1.60

Description：IGBT TRENCH FS 1200V 10A TO252-3
Series：TRENCHSTOP™

SKU:c2aeeb8db88b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 10A TO252-3
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：9:00 AM
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 3A
Power - Max：45 W
Switching Energy：210µJ (on), 160µJ (off)
Input Type：Standard
Gate Charge：24 nC
Td (on/off) @ 25°C：19ns/89ns
Test Condition：600V, 3A, 60Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：PG-TO252-3
Grade：-
Qualification：-

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IGD03N120S7ATMA1

Overview

The IGD03N120S7ATMA1 is a short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device. It features a collector-emitter voltage of 1200 V and a DC collector current of 10 A at 25°C case temperature. The saturation voltage is 2 V at 150°C junction temperature. Short-circuit withstand time is 8 µs. Operating junction temperature ranges from -40°C to 150°C. Power dissipation is 45 W at 25°C case temperature.

Feature Summary

Utilizes TRENCHSTOP™ IGBT 7 technology for low saturation voltage
Provides short circuit ruggedness with an 8 µs withstand capability
Offers wide range of dv/dt controllability

Applications

Industrial drives

Procurement Notes

Verify the component matches the exact Infineon Technologies part number IGD03N120S7ATMA1. Confirm the datasheet revision is 1.00 dated 2024-03-11. Ensure the package type is PG-TO252-3. Check that the product is qualified for industrial applications according to JEDEC standards. Validate that the marking on the device corresponds to G03MS7.

Selection Notes

Select this component for industrial drive applications requiring high voltage isolation and robust short-circuit protection. Consider the thermal resistance values when designing heat sinks. Evaluate the switching energy losses against system efficiency requirements. Ensure gate drive circuits accommodate the specified gate charge and threshold voltage parameters.

Part Context

This IGBT belongs to the TRENCHSTOP™ IGBT 7 family, designed for high-voltage power switching. It represents an evolution in trench gate technology aimed at reducing conduction losses while maintaining fast switching speeds. The device is intended for use in demanding industrial environments where reliability under fault conditions is critical.