IGD06N60TATMA1

Overview

The IGD06N60TATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a TO-252-3 surface-mount package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. The device exhibits a typical saturation voltage of 1.5 V and a maximum power dissipation of 88 W. Key electrical parameters include a gate-emitter leakage current of 100 nA, a gate charge of 42 nC, and switching times of 9 ns (turn-on) and 130 ns (turn-off). It operates within a temperature range of -40°C to +175°C junction temperature.

Feature Summary

• Incorporates Trenchstop IGBT3 technology for optimized trade-offs between conduction losses and switching performance.
• Features a robust PG-TO252-3-11 surface-mount package designed for efficient thermal management in compact designs.
• Provides high short-circuit capability and ruggedness suitable for demanding power switching applications.

Applications

• Home appliance motor drives
• Switching power supplies
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations as required by your supply chain regulations. Cross-reference the component marking code on the physical device with official Infineon documentation to prevent counterfeit substitution during assembly.

Selection Notes

Select this component when a 600V rated IGBT with moderate current handling is required in a space-constrained SMD footprint. The Trenchstop III technology offers lower switching losses compared to standard field-stop structures. Ensure the PCB thermal design can dissipate up to 88W under worst-case conditions, as the TO-252-3 package has limited heat sinking area compared to through-hole alternatives.

Part Context

This part belongs to the IGD06N series of Trenchstop IGBTs from Infineon. These devices are engineered for cost-effective power switching solutions where efficiency and reliability are critical. The series targets consumer electronics and industrial control markets, providing a balance between performance metrics and manufacturing economy.

Replacement Considerations

Direct pin-compatible replacements may include other Infineon IGBTs in the TO-252-3 package with similar 600V/12A ratings, such as those from the same Trenchstop family. Verify that any substitute matches the switching speed characteristics to avoid drive circuit compatibility issues.

FAQ

What is the typical turn-on and turn-off time for this IGBT?

The typical turn-on time (td(on)) is 9 ns and the typical turn-off time (td(off)) is 130 ns, measured under test conditions of 400V, 6A, 23 Ohm gate resistance, and 15V gate voltage.

Is this component logic-level compatible?

No, this IGBT requires a standard gate drive voltage of typically 15V for full enhancement, unlike logic-level MOSFETs which operate at lower voltages like 5V or 3.3V.

What is the maximum junction temperature rating?

The maximum operating junction temperature (Tj) is specified as +175°C, allowing for operation in high-temperature environments common in automotive and industrial applications.