IGN0912LM500

IGN0912LM500

$573.38
  • Description:RF MOSFET
  • Series:*

SKU:a669576f270e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET
  • Series:*
  • Mfr:Integra Technologies Inc.
  • Package:Tray
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

Download product information

IGN0912LM500

Overview

The IGN0912LM500 is a GaN-on-SiC high-power pulsed transistor designed for L-band avionics systems. It operates within the frequency range of 0.96 to 1.22 GHz, covering TACAN and DME applications. The device delivers a peak output power (POUT-PK) of at least 500 Watts under specific pulsed conditions: 48 microseconds ON time, 18 microseconds OFF time, with a duty cycle of 6.4% at 50 Volts. This component utilizes Gallium Nitride on Silicon Carbide HEMT technology to achieve high efficiency and power density in military and aerospace radar environments.

Feature Summary

  • Utilizes GaN-on-SiC HEMT technology for high reliability
  • Optimized for pulsed operation in L-band avionics
  • Provides high peak output power density

Applications

  • TACAN systems
  • DME systems
  • Pulsed C-band radar applications

Procurement Notes

Verify the exact datasheet version and electrical characteristics directly from Integra Technologies Inc. before integration. Confirm that the application environment matches the specified pulsed parameters, including the 48us ON and 18us OFF timing constraints. Ensure thermal management solutions are adequate for the 500W peak power output. Cross-reference the part number to distinguish between similar models like IB0912M500 if bandwidth requirements differ.

Selection Notes

Select this component when designing L-band avionics transmitters requiring high peak power in a compact form factor. The GaN-on-SiC construction offers superior performance compared to traditional silicon devices. Consider the specific duty cycle and pulse width requirements of the system, as the 500W rating is tied to the 6.4% duty cycle. Evaluate thermal resistance and package compatibility for the intended PCB layout.

Part Context

Integra Technologies specializes in RF and microwave high-power solutions for military and aerospace sectors. The IGN0912LM500 belongs to their portfolio of GaN-based transistors engineered for demanding avionics environments. It complements other models like the IGT5259L50, which targets C-band radar, demonstrating the company's focus on wideband, high-efficiency semiconductor devices for critical communication and navigation systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Users should consult Integra Technologies directly for equivalent or upgraded components.

IGN0912LM500IGN0912LM500
$573.38
Buy Now