IGN1214M300

IGN1214M300

$668.82
  • Description:RF MOSFET
  • Series:*

SKU:6fa9b3b76b5f Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET
  • Series:*
  • Mfr:Integra Technologies Inc.
  • Package:Tray
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

Download product information

IGN1214M300

Overview

The IGN1214M300 is a high-power Gallium Nitride on Silicon Carbide (GaN-on-SiC) RF power transistor designed for L-band radar systems. It operates within the 1.2 to 1.4 GHz frequency range and delivers significant output power suitable for pulsed applications. The device utilizes advanced semiconductor materials to ensure robust performance in demanding radar environments.

Feature Summary

  • High-power GaN-on-SiC construction for enhanced thermal and electrical performance
  • Optimized specifically for L-band radar system integration
  • Designed for reliable operation in pulsed signal applications

Applications

  • L-band radar systems
  • Pulsed radar transmitters
  • Military radar equipment

Procurement Notes

Verify the specific datasheet version and ordering suffixes directly with Integra Technologies or authorized distributors. Confirm that the component meets all required environmental and reliability standards for your specific radar application before procurement.

Selection Notes

Select this component when high power density and L-band operation are required for radar transmitters. Ensure the design supports the necessary biasing and thermal management for GaN-on-SiC devices. Verify compatibility with existing system architectures for pulsed signal handling.

Part Context

Integra Technologies specializes in high-power RF and microwave semiconductors. The IGN1214M300 belongs to their portfolio of discrete RF transistors, complementing other models like the IGN1214M250 and matched amplifier solutions for comprehensive radar system components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Integra Technologies technical support for direct replacements or cross-reference options based on specific electrical requirements.

IGN1214M300IGN1214M300
$668.82
Buy Now