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The IGP20N60H3XKSA1 is a high-speed switching series third-generation IGBT in Trench and Fieldstop technology. It features a collector-emitter voltage of 600 V, a continuous collector current of 40 A at 25°C, and a saturation voltage of 1.95 V at 25°C. The device supports a maximum junction temperature of 175°C and operates within a -40°C to +175°C range. It utilizes a PG-TO220-3 package with a thermal resistance of 0.88 K/W.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure that the component meets all relevant environmental compliance standards required for the intended industrial application before finalizing procurement.
Select this component for designs requiring high-speed switching capabilities within the 600V class. Consider the 175°C maximum junction temperature rating for thermal management strategies. Evaluate the short-circuit withstand time requirements against the specified 5µs limit under defined gate voltage conditions.
This part belongs to the High-speed switching series third generation from Infineon Technologies. It is designed for industrial power control applications where efficiency and switching speed are critical parameters. The device integrates advanced Trench and Fieldstop technology to optimize performance metrics.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on similar voltage or current ratings without verifying switching characteristics and package dimensions.
The maximum short-circuit withstand time is 5 µs when VGE = 15.0V and VCC ≤ 400V.
Yes, the device is qualified according to JEDEC for target applications.