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The IGP40N65F5XKSA1 is a high-speed fifth-generation TRENCHSTOP™ 5 FAST IGBT manufactured by Infineon Technologies. It features a 650V collector-emitter breakdown voltage and a continuous DC collector current of 74A at 25°C, decreasing to 46A at 100°C. The device operates with a maximum junction temperature of 175°C and utilizes PG-TO220-3 packaging. Key electrical parameters include a saturation voltage of 1.6V at 25°C and 40A, a gate charge of 95nC, and switching energies of 0.36mJ (turn-on) and 0.10mJ (turn-off) under standard inductive load conditions.
Verify the specific package variant required, as the datasheet distinguishes between the IGP prefix for PG-TO220-3 and IGW for PG-TO247-3. Confirm that the ordering suffix XKSA1 aligns with the desired lead-free plating and RoHS compliance status. Ensure the procurement channel provides valid traceability documentation for this discrete semiconductor component.
Select this component for designs requiring high-speed switching capabilities within the TRENCHSTOP™ 5 family. The device supports a maximum junction temperature of 175°C, offering thermal flexibility for demanding environments. Engineers should account for the reduction in continuous collector current capability as case temperatures increase beyond 25°C.
This part belongs to the sixth generation of high-speed IGBTs from Infineon, specifically the TRENCHSTOP™ 5 series. It serves as a robust solution for industrial power control applications where switching speed and efficiency are critical. The product spectrum includes complementary diodes and variants tailored for boost converter topologies.
Public confirmed substitute part numbers: None available.