SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IGQ100N120S7XKSA1 is a single N-channel IGBT from the TRENCHSTOP™ IGBT 7 family, utilizing S7 technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 188 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a saturation voltage of 2.0 V at 175°C, a gate charge of 610 nC, and short-circuit ruggedness up to 8 µs.
Verify component authenticity through authorized Infineon distributors or official channels. Confirm the specific ordering suffix matches project requirements. Check for the NRND status if applicable to long-term supply planning. Ensure compliance with JEDEC qualification standards for industrial environments before integration.
Select this component for high-voltage industrial switching applications requiring robust short-circuit tolerance. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the gate charge and switching energy losses for driver design optimization in medium-frequency operations.
This part belongs to the TRENCHSTOP™ IGBT 7 series, designed for improved efficiency and ruggedness compared to previous generations. It utilizes advanced trench gate technology to reduce conduction and switching losses while maintaining high reliability in demanding power electronics environments.
Public confirmed substitute part numbers are not available in the provided documentation.