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Product Detailed Parameters
- Description：IGBT
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IGQ120N120S7 is a short-circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device in a PG-TO247-3-PLUS package. It features a collector-emitter voltage of 1200 V and a DC collector current of 216 A at 25°C case temperature. The saturation voltage is 1.65 V typ at 25°C and 2.0 V max at 175°C junction temperature. Short-circuit withstand time is 8 µs with a maximum short-circuit current of 720 A. Total switching energy is 16.1 mJ at 25°C and 22.1 mJ at 175°C. Operating junction temperature ranges from -40°C to 175°C.
Feature Summary
- Short-circuit rugged design supporting 8 µs withstand time
- TRENCHSTOP™ IGBT 7 technology for optimized switching performance
- Wide dv/dt controllability for flexible circuit design
Applications
- Industrial power supplies
- Solar inverters
Procurement Notes
Verify the exact ordering suffix against Infineon's official documentation before procurement, as suffixes define specific tape-and-reel or tube packaging configurations. Confirm that the component meets JEDEC industrial qualification standards required for the target application environment. Ensure gate drive circuits are compatible with the specified ±20 V gate-emitter voltage limits to prevent damage.
Selection Notes
Select this component when high short-circuit ruggedness is required alongside low conduction losses. The 1200 V rating suits medium-voltage industrial applications. Evaluate thermal management requirements based on the 0.15 K/W junction-case thermal resistance. Consider the 710 nC total gate charge for driver capability sizing. Verify that the 8 µs short-circuit duration aligns with the protection circuitry response time.
Part Context
This part belongs to the Infineon TRENCHSTOP™ IGBT 7 family, designed for industrial power conversion. It utilizes advanced trench gate technology to reduce switching losses compared to previous generations. The PG-TO247-3-PLUS package provides robust mechanical stability and efficient heat dissipation for through-hole mounting in high-power modules.
Replacement Considerations
Direct pin-compatible replacements within the same series include IKQ120N120CS7XKSA1 (with anti-parallel diode) or other S7 variants like IGQ100N120S7XKSA1. Verify that substitute parts match the 1200 V rating, TO-247-3 package, and short-circuit ruggedness specifications.
