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The IGTH20N40AD is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It is designed for switching applications and features a collector-emitter breakdown voltage of 400 V and a maximum continuous collector current of 20 A. The device utilizes a TO-218AC package with an isolated tab configuration, suitable for through-hole mounting. This component belongs to the single IGBT category and operates within standard industrial temperature ranges.
Verify that the specific unit matches the TO-218AC package style and isolated tab configuration required for your thermal design. Confirm the manufacturer origin is Harris Corporation or authorized successor entities, as production lines may have changed. Ensure the component meets the necessary electrical ratings for your specific circuit load before integration.
Select this component when a 400 V rating and 20 A current capacity are required in a through-hole format. The TO-218AC package allows for straightforward mechanical attachment to cooling structures. Consider the switching characteristics and thermal resistance values provided in the official datasheet to ensure compatibility with your system's power dissipation requirements.
This IGBT is part of Harris Corporation's discrete semiconductor portfolio, focusing on power electronics solutions. The company has undergone various corporate transitions, affecting the lineage of these components. The IGTH20N40AD represents a legacy product line often sourced from secondary distributors or surplus markets rather than primary OEM channels.
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult official cross-reference guides or contact authorized distributors for equivalent devices with matching electrical and mechanical specifications.