IGTM10N40

$1.34

Description：N CHANNEL IGBT FOR SWITCHING APP
Series：-

SKU:72642fcb4203 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：N CHANNEL IGBT FOR SWITCHING APP
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：400 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-3
Grade：-
Qualification：-

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IGTM10N40

Overview

The IGTM10N40 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. Designed for switching applications, this component features a maximum collector-emitter voltage of 400 V and a continuous collector current rating of 10 A. It utilizes a TO-3 metal flange mount package, providing robust thermal dissipation capabilities suitable for high-power environments. The device operates within a junction temperature range up to 200 °C, ensuring reliability under demanding conditions.

Feature Summary

Single N-channel IGBT configuration optimized for power switching applications
High voltage handling capability with 400 V collector-emitter breakdown
Metal flange mount construction for efficient heat transfer and thermal management

Applications

Industrial motor control systems
High-power inverter circuits
Switching power supply designs

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as Harris Corporation's semiconductor assets have undergone various acquisitions and transitions. Confirm that the received unit matches the original Harris specifications rather than subsequent rebranded versions from acquired entities. Ensure the TO-3 package dimensions align with your mounting requirements. Check for any updated compliance markings or datasheet revisions that may affect integration into legacy designs.

Selection Notes

Select the IGTM10N40 when a rugged, high-voltage switching solution is required in a through-hole format. Its 10 A current capacity and 400 V rating make it appropriate for medium-power industrial loads. Consider the thermal resistance of the TO-3 package and ensure adequate heatsinking is implemented. This component is suitable for designs prioritizing durability and high-temperature operation over miniaturization.

Part Context

This IGBT belongs to the broader category of power semiconductors used for controlling electrical energy flow. Unlike MOSFETs, IGBTs offer lower conduction losses at higher voltages, making them distinct in power electronics architectures. The TO-3 package represents a traditional, durable form factor often found in industrial equipment where space constraints are less critical than thermal performance and long-term reliability.