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The IGU04N60T is a single N-channel Insulated Gate Bipolar Transistor from the TRENCHSTOP™ series, manufactured by Infineon Technologies. It features a collector-emitter voltage of 600 V and a continuous DC collector current of 9.5 A at 25°C case temperature. The typical collector-emitter saturation voltage is 1.5 V at 25°C. The device operates within a junction temperature range of -40°C to +175°C and has a maximum power dissipation of 42 W at 25°C. It utilizes the PG-TO251-3 surface-mount package.
Verify component authenticity through authorized Infineon distributors or direct channels. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with JEDEC standards for target applications. Check for RoHS compliance status as indicated in official documentation before procurement.
Select this component for designs requiring robust performance in frequency inverter and drive applications. Consider the 600V rating and 9.5A current capability relative to thermal management constraints. Evaluate the PG-TO251-3 package suitability for the intended PCB layout and heat dissipation strategy.
This discrete IGBT belongs to the TRENCHSTOP™ family, which emphasizes low loss and high switching speed. It is distinct from intelligent power modules and MOSFETs, serving specifically as a high-power switching element. The product is not qualified according to AEC-Q100 or AEC-Q101 automotive standards.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult Infineon technical support for cross-reference recommendations based on specific electrical and thermal requirements.
No, the product is explicitly stated to not be qualified according to AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
The device can withstand a short circuit condition for a maximum duration of 5 microseconds under specified test conditions.
The maximum operating junction temperature is 175°C.