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The IGW30N60H3FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TrenchStop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 45 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 416 W. It operates within a temperature range of -40°C to +175°C and is housed in a TO-247-3 package.
Verify the complete part number including the suffix FKSA1 to ensure correct packaging and traceability. Confirm RoHS compliance status via the official datasheet before integration. Check for end-of-life notices or alternative recommendations directly from Infineon documentation to mitigate supply chain risks during long-term production planning.
Select this component when a 600V IGBT with moderate current handling and efficient switching characteristics is required. The TO-247-3 package facilitates easy mounting on heatsinks. Ensure the application circuit supports the specific gate charge and switching energy parameters defined in the electrical characteristics table for optimal efficiency.
This device belongs to the TrenchStop IGBT family, which combines trench gate and field-stop technologies. This architecture reduces switching losses compared to previous generations while maintaining low saturation voltage. The H3 suffix typically denotes specific internal resistance and switching speed variants within the broader product line.
Official cross-reference data for direct substitutes is not available in the provided source material. Engineers should consult Infineon's official replacement tool or datasheet notes for qualified alternatives that match the electrical and mechanical specifications.