SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IGW30N60TP is a high-speed N-channel IGBT from Infineon's TRENCHSTOP Performance series, utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 53 A at 25°C case temperature. The saturation voltage is 1.6 V at 25°C. Operating junction temperatures range from -40°C to +175°C. Switching characteristics include a turn-on energy of 0.71 mJ and turn-off energy of 0.42 mJ at 25°C. The device is housed in a PG-TO247-3 package.
Verify the specific ordering suffix against official documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component meets all environmental and safety requirements for the intended application before finalizing procurement.
Select this component for applications requiring high efficiency and fast switching speeds within the 600V class. Consider the thermal resistance and maximum power dissipation limits when designing heat sinks. Evaluate gate resistor values to optimize switching performance and minimize EMI while ensuring safe operating area compliance under varying load conditions.
This part belongs to the TRENCHSTOP Performance series, designed for industrial power control. It represents an evolution in silicon IGBT technology, focusing on reducing conduction and switching losses simultaneously. The series targets applications demanding high reliability and compact design solutions in power electronics systems.
Check datasheets for alternative parts offering similar voltage ratings and current capabilities. Verify pinout compatibility and thermal characteristics. Ensure any substitute maintains equivalent switching speeds and saturation voltages to preserve system performance without redesigning the gate drive circuitry.
The maximum short-circuit withstand time is 5 µs at a junction temperature of 150°C.
No, this product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
The typical gate charge is 130 nC under standard test conditions.