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The IGW40N60H3FKSA1 is a high-speed IGBT in Trench and Fieldstop technology, rated at 600V collector-emitter voltage and 40A continuous DC collector current. It features a maximum junction temperature of 175°C and operates within a -40°C to +175°C range. The device includes an integrated anti-parallel diode with a saturation voltage of 1.95V at 25°C. Packaged in PG-TO247-3 for through-hole mounting, it offers low EMI and soft recovery characteristics suitable for industrial power control applications.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO247-3 package drawing and marking code G40H603. Confirm that the datasheet revision aligns with your design requirements before finalizing procurement orders.
Select this component for designs requiring high switching speeds and robust short-circuit withstand capabilities up to 5 microseconds. Consider the thermal resistance values when designing heatsinking solutions for case temperatures ranging from 25°C to 100°C. Verify gate drive voltage levels match the specified 15V operating condition for optimal performance.
This part belongs to the High-speed switching series third generation of IGBTs from Infineon Technologies. It utilizes Trench and Fieldstop technology to achieve superior switching performance compared to standard IGBTs. The product spectrum includes PSpice models for simulation purposes, supporting detailed circuit design and analysis during the development phase.
Public confirmed substitute part numbers are not available in the provided source material.