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The IGW40N65F5FKSA1 is a single IGBT from the TRENCHSTOP™ 5 series, utilizing high-speed F5 technology in a PG-TO247-3 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 74 A at 25°C. The saturation voltage is 1.6 V at 25°C, with a maximum junction temperature of 175°C. Gate charge is 95 nC, and power dissipation reaches 250 W.
Verify the specific suffix FKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering code matches the exact PG-TO247-3 variant required for your design. Cross-reference datasheet revision 2.1 for any updates to thermal or electrical parameters before finalizing procurement specifications.
Select this component for industrial power control circuits requiring robust high-speed switching capabilities. The device supports operation up to 175°C, making it suitable for demanding thermal environments. Verify that the application circuit can handle the specified pulsed collector current and that the gate drive voltage aligns with the recommended operating conditions for optimal efficiency.
This part belongs to the TRENCHSTOP™ 5 family of silicon IGBTs designed for industrial applications. It shares core technological characteristics with the IGP40N65F5 but utilizes a through-hole TO-247-3 package instead of the TO-220-3 format. The F5 designation indicates the fifth generation of high-speed trench technology within this product line.
Direct substitutes include the IKW40N65F5AXKSA1. Verify pinout compatibility and thermal resistance differences when transitioning between packages.