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The IGW50N60TPXKSA1 is a single N-channel IGBT from the TRENCHSTOP Performance series, utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C case temperature. The device operates with a maximum junction temperature of 175°C and is housed in a PG-TO247-3 through-hole package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and Pb-free lead plating requirements for your assembly process. Ensure the component matches the PG-TO247-3 package outline before integration into the design.
Select this component for designs requiring high-speed switching capabilities within the 600V range. Consider the thermal resistance characteristics and the 175°C maximum junction temperature rating for heat dissipation planning. Evaluate the short-circuit withstand time and safe operating area limits to ensure robust protection circuitry is implemented.
This part belongs to the TRENCHSTOP Performance series of Insulated Gate Bipolar Transistors manufactured by Infineon Technologies. The series utilizes advanced Trench and Fieldstop technologies to achieve superior performance metrics compared to standard planar devices, specifically targeting efficiency improvements in industrial power control systems.
IGW50N60TP
The maximum short-circuit withstand time is 5 µs when the gate-emitter voltage is 15.0 V and the collector-emitter voltage is less than or equal to 400 V.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
At a junction temperature of 25°C, with a collector current of 50 A and a supply voltage of 400 V, the typical turn-off energy loss is 0.85 mJ.