IGW50N65F5FKSA1

$4.77

Description：IGBT 650V 80A TO247-3
Series：TrenchStop®

SKU:3507d6d8450b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 80A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：305 W
Switching Energy：490µJ (on), 160µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：21ns/175ns
Test Condition：400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IGW50N65F5FKSA1

Overview

The IGW50N65F5FKSA1 is a single IGBT in the TRENCHSTOP™ 5 series, utilizing high-speed F5 technology. It features a collector-emitter voltage of 650 V and a DC collector current of 80 A at 25°C. The saturation voltage is 1.6 V at 50 A. Switching energy losses are 0.49 mJ (turn-on) and 0.16 mJ (turn-off). It operates up to a maximum junction temperature of 175°C with a power dissipation of 305 W.

Feature Summary

High-speed switching performance optimized for hard-switching and resonant topologies
Low gate charge suitable for integration with SiC Schottky diodes
Qualified according to JEDEC standards for target applications

Applications

Solar converters
Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking details. Ensure that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement.

Selection Notes

Select this component for designs requiring high efficiency in mid-to-high frequency applications. Consider the thermal resistance characteristics and ensure adequate heat sinking to maintain junction temperatures within the specified operational limits during continuous operation.

Part Context

This device belongs to the TRENCHSTOP™ 5 family, representing the fifth generation of Infineon's IGBT technology. It is designed as a standalone discrete transistor for industrial power control applications, offering a balance between conduction and switching losses.