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The IGW50N65H5FKSA1 is a single IGBT in the TRENCHSTOP™ 5 technology series, designed for high-speed switching applications. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device operates with a maximum junction temperature of 175°C and utilizes a PG-TO247-3 package. Key electrical parameters include a saturation voltage of 1.65 V at 50 A and 25°C, a gate charge of 120 nC, and power dissipation of 305 W.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm packaging details and compliance status. Confirm that the component matches the exact datasheet revision required for your design specifications. Ensure thermal management solutions align with the specified thermal resistance values provided in the manufacturer's data sheet.
Select this component for designs requiring robust performance in mid-to-high frequency switching environments. The low gate charge supports efficient drive requirements. Verify that the system voltage does not exceed the 650 V rating under all operating conditions. Consider the thermal characteristics when designing heat sinks to maintain junction temperatures within the safe operating area.
This part belongs to the TRENCHSTOP™ 5 family from Infineon Technologies. It serves as a high-speed switching solution for industrial power control systems. The device integrates advanced silicon technology to balance conduction and switching losses effectively.
The datasheet indicates it is a plug-and-play replacement for previous generation IGBTs. Specific substitute part numbers are not listed in the provided documentation.