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The IGW75N60H3FKSA1 is a single N-channel IGBT from Infineon's HighSpeed 3 series, utilizing TrenchStop technology. It features a TO-247-3 package with through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.85 V and supports a power dissipation of 428 W. Operating temperatures range from -40°C to +175°C, with a gate-emitter voltage limit of +/- 20 V.
Verify the complete part number including suffix FKSA1 against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status via the manufacturer datasheet before procurement. Cross-reference the Mouser component ID 726-IKW75N60H3FKSA1 for accurate distributor identification. Ensure ordering quantities align with factory packaging multiples.
Select this component for designs requiring 600V blocking capability with 80A continuous current handling in a standard TO-247 footprint. The HighSpeed 3 series offers a balance between low saturation voltage and fast switching speeds suitable for frequencies up to 100 kHz. Evaluate thermal management requirements given the 428 W power dissipation rating and ensure gate drive voltages remain within the +/- 20 V limits.
This device belongs to Infineon's TrenchStop IGBT portfolio, specifically the HighSpeed 3 generation. It shares the same electrical ratings as the IKW75N60H3 but may differ in packaging or trailing suffixes indicating specific logistics configurations. The component is distinct from lower-current variants like the IKW20N60H3 and higher-voltage models in the 650V series.
The IKW75N60H3 serves as a primary equivalent within the same series. Verify if the FKSA1 suffix denotes a specific reel configuration that impacts mechanical compatibility or automated assembly processes compared to standard tube-packaged versions.