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The IGZ75N65H5 is a high-speed IGBT in TRENCHSTOP™ 5 technology with a 650V breakdown voltage. It features a PG-TO247-4 package and supports a maximum junction temperature of 175°C. At 25°C, the collector-emitter saturation voltage is 1.65V at 75A. The DC collector current is 119.0A at 25°C case temperature and 75.0A at 100°C. Power dissipation reaches 395W at 25°C case temperature. Gate charge is typically 166nC.
Verify component authenticity by checking the marking code G75EH5 against official Infineon documentation. Confirm that the package matches the specified PG-TO247-4 configuration. Ensure the ordering suffix XKSA1 aligns with specific lead-free and RoHS compliance requirements before finalizing procurement orders.
Select this device for applications requiring high-speed switching capabilities within the TRENCHSTOP™ 5 family. Consider the thermal resistance characteristics when designing heat sinks for continuous operation. Verify gate drive compatibility with the specified threshold voltage and internal emitter inductance parameters for optimal circuit performance.
This component belongs to the High Speed Series Fifth Generation product line from Infineon Technologies. It utilizes silicon technology and is designed as a single configuration discrete transistor. The part is intended for industrial power control applications where efficient energy conversion is critical.
Officially documented as a plug-and-play replacement for previous generation IGBTs within the same series. Cross-reference with datasheet specifications to ensure electrical compatibility before substituting older models in existing designs.
No, the emitter and Kelvin emitter pins are not exchangeable. Swapping them may lead to device malfunction.
Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in the datasheet for optimum lifetime and reliability.