IHFW40N65R5SXKSA1

$2.55

Description：IGBT TRENCH FS 650V 61A HSIP247
Series：Trenchstop™ 5

SKU:9f408f56bcfe Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 61A HSIP247
Series：Trenchstop™ 5
Mfr：Infineon Technologies
Package：Bulk,Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：61 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：108 W
Switching Energy：1.52mJ (on), 700µJ (off)
Input Type：Standard
Gate Charge：142 nC
Td (on/off) @ 25°C：44ns/363ns
Test Condition：400V, 40A, 23.1Ohm, 15V
Reverse Recovery Time (trr)：103 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-HSIP247-3-2
Grade：-
Qualification：-

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IHFW40N65R5SXKSA1

Overview

The IHFW40N65R5S is a Reverse-Conducting IGBT in TRENCHSTOP™ 5 technology with a monolithic body diode in a fully isolated PG-HSIP247-3-2 package. It features a 650V breakdown voltage, 40A DC collector current at 25°C, and a maximum junction temperature of 175°C. The device provides 2500VRMS electrical isolation and includes an internal emitter inductance of 13nH.

Feature Summary

TRENCHSTOP™ 5 Advanced Isolation technology for best-in-class efficiency
Fully isolated package with 2500VRMS electrical isolation
Monolithic antiparallel diode with very soft, fast recovery characteristics

Applications

Induction cooking
Inverterized microwave ovens
Resonant converters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm that the application environment meets the JEDEC qualification standards required for industrial use cases.

Selection Notes

Select this component when high-voltage isolation is mandatory within a single discrete package. The integrated reverse-conducting diode simplifies circuit topology by eliminating external parallel diodes, reducing component count and layout complexity.

Part Context

This part belongs to the TRENCHSTOP™ 5 Advanced Isolation family. It utilizes silicon technology and is designed as a plug-and-play replacement for previous generation IGBTs in resonant topologies while offering enhanced safety through galvanic isolation.

Replacement Considerations

Official datasheets describe this device as a plug-and-play replacement for previous generation IGBTs. No specific substitute part numbers are documented in the provided source material.