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The IHW15N15N120E1XKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 30 A at 25°C. The device operates within a temperature range of -40°C to +175°C and is housed in a TO-247-3 package for through-hole mounting.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as the part may be scheduled for discontinuation. Ensure proper handling procedures for ESD-sensitive semiconductor devices during storage and assembly.
Select this component for high-voltage applications requiring robust switching characteristics. Consider the 1200V rating for mains-connected systems. Evaluate thermal management requirements given the 62.2W power dissipation capability. Compare against newer generations if long-term supply availability is critical due to potential obsolescence.
This IGBT belongs to Infineon's TRENCHSTOP family, known for combining trench gate and field-stop technologies. It serves as a discrete power switch solution for medium-power industrial applications. The TO-247-3 package provides mechanical robustness and efficient heat dissipation for through-hole PCB mounting.
IHW15N120E1XKSA1 is scheduled for obsolescence. No direct public substitute part numbers are confirmed in available documentation. Engineers should consult Infineon for recommended next-generation replacements with compatible electrical specifications.