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The IHW15T120 is a Soft Switching Series power semiconductor featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery anti-parallel EmCon HE diode. It operates at 1200V collector-emitter voltage and supports up to 30A DC collector current at 25°C case temperature. The device utilizes a PG-TO247-3 package with a maximum junction temperature of 150°C. Key electrical parameters include a VCE(sat) of 1.7V at 25°C and a short circuit withstand time of 10 µs.
Verify the component against the official Infineon datasheet Rev. 2.3 Sep 08 to confirm technical specifications. Ensure the marking H15T120 matches the physical device. Confirm RoHS compliance and Pb-free lead plating status as specified in the documentation before integration into designs.
Select this component for circuits requiring 1200V blocking capability and low switching losses. The integrated anti-parallel diode simplifies design by eliminating external freewheeling requirements. Consider the thermal resistance values when designing heat sinks for continuous operation at elevated temperatures.
This part belongs to Infineon's Soft Switching Series, which focuses on minimizing electromagnetic interference and switching losses. It complements other discrete power semiconductors in the portfolio designed for high-frequency power conversion environments where efficiency and thermal stability are critical performance factors.
No public confirmed substitute part numbers are available in the provided source material.
The device has a short circuit withstand time of 10 µs under conditions of VGE = 15V, VCC ≤ 1200V, and Tj ≤ 150°C.
No, the IHW15T120 does not have an integrated gate resistor (RGint none).
The IGBT utilizes TrenchStop and Fieldstop technology, which offers tight parameter distribution and high ruggedness.