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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 40A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 20A
- Power - Max：310 W
- Switching Energy：950µJ (off)
- Input Type：Standard
- Gate Charge：211 nC
- Td (on/off) @ 25°C：-/387ns
- Test Condition：600V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IHW20N120R3FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP™ technology. It features a monolithic body design with an integrated anti-parallel diode in the TO-247-3 package. Key electrical parameters include a collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.48 V and supports a power dissipation of 310 W. It operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Integrates a fast recovery anti-parallel diode with the IGBT chip for efficient switching.
- Utilizes TRENCHSTOP™ technology to optimize switching performance and reduce losses.
- Features a robust monolithic body construction for high reliability.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the specific suffix FKSA1 against official datasheets to confirm packaging details and compliance status. Confirm availability as distribution channels may list this part as end-of-life or limited stock. Ensure the ordering code matches the exact component requirements for your bill of materials before finalizing procurement.
Selection Notes
Select this component for applications requiring high voltage blocking capability and moderate current handling in a through-hole package. Consider the 1.48 V saturation voltage for thermal management calculations. Verify that the TO-247-3 footprint aligns with the PCB layout constraints and that the gate drive circuitry supports the required switching speeds for the intended frequency.
Part Context
This IGBT belongs to the IH series, characterized by its monolithic body structure which integrates the diode and transistor on a single silicon die. This configuration reduces parasitic inductance compared to discrete modules. The TRENCHSTOP™ generation indicates advanced trench gate technology aimed at balancing conduction and switching losses for industrial power electronics.
Replacement Considerations
IHW20N120R5 offers similar voltage and current ratings but features a higher saturation voltage of 1.55 V and lower power dissipation of 288 W. Verify thermal compatibility when substituting. Other alternatives in the same family should be checked for identical pinout and mounting dimensions.
