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The IHW20N135R3 is a Resonant Switching Series reverse-conducting IGBT with a monolithic body diode. It features TRENCHSTOP technology, offering a collector-emitter voltage of 1350V and a continuous collector current of 40A at 25°C. The device has a maximum junction temperature of 175°C and operates in a PG-TO247-3 package. Key electrical parameters include a VCEsat of 1.6V at 25°C, a gate charge of 195nC, and an Eoff of 1.3mJ under standard test conditions.
Verify the specific ordering suffix to confirm packaging details and compliance certifications. Ensure the component matches the required RoHS and halogen-free standards as specified in the datasheet. Confirm that the application environment does not exceed the absolute maximum ratings to maintain reliability.
Select this component for high-voltage resonant applications requiring robust performance. Consider the thermal resistance and power dissipation limits when designing heat sinks. Verify compatibility with soft-switching topologies due to the diode's design constraints. Evaluate gate drive requirements based on the specified gate charge and threshold voltage.
This part belongs to Infineon's Resonant Switching Series, utilizing TRENCHSTOP technology. It is designed for high-reliability applications where low switching losses and high breakdown voltage are critical. The series targets efficient power conversion in consumer and industrial appliances.
Check for direct substitutes within the same TRENCHSTOP family or other reverse-conducting IGBTs with matching voltage and current ratings. Ensure thermal and electrical characteristics align with the original design specifications before substitution.
No, the powerful monolithic body diode is designed for soft commutation only.
The non-repetitive peak collector current (ICSM) is 200 A, limited by junction temperature and pulse width.
No, this product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.