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The IHW20N140R5LXKSA1 is a reverse-conducting IGBT with a monolithic body diode, rated at 1400 V collector-emitter voltage and 20 A DC collector current. It utilizes the TRENCHSTOP™ 5 technology for low saturation voltage and soft switching characteristics. The device operates within a junction temperature range of -40 °C to 175 °C and features a PG-TO247-3 package. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V at 25 °C and a typical gate charge of 125 nC. The integrated diode supports forward currents up to 40 A.
Verify component authenticity by cross-referencing the manufacturer's part number and ordering suffix against official Infineon documentation. Confirm that the specific marking code matches the datasheet specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the product qualification section before finalizing procurement orders.
Select this component for resonant or soft-switching applications due to its optimized soft turn-off characteristics. Verify that the circuit design accommodates the monolithic diode's limitations, specifically avoiding hard commutation scenarios. Ensure thermal management solutions maintain the junction temperature within the specified operating range to guarantee long-term reliability and performance stability.
This device belongs to Infineon's TRENCHSTOP™ 5 series of reverse-conducting IGBTs. It shares the same core technology and packaging format as other models in the R5L family, such as the IHW25N140R5LXKSA1, but differs in current rating. The TO-247-3 package provides a standardized footprint for through-hole mounting in power electronics designs.
Direct replacements within the same family include the IHW25N140R5LXKSA1 and IHW30N140R5LXKSA1, which offer higher current ratings while maintaining identical voltage levels and package dimensions. Substitutions should be validated against the specific thermal and electrical requirements of the target application.
No, the datasheet explicitly states that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The monolithic body diode is designed for soft commutation only. Hard commutation should be avoided to ensure optimum lifetime and reliability.
The non-repetitive peak collector current (ICSM) is rated at 200 A, limited by the maximum junction temperature of 175 °C and a pulse width less than 3 µs.