IHW20N65R5XKSA1

IHW20N65R5XKSA1

$2.92
  • Description:IGBT 650V 40A TO247-3
  • Series:TrenchStop®

SKU:44a6a8030b8c Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 650V 40A TO247-3
  • Series:TrenchStop®
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 20A
  • Power - Max:150 W
  • Switching Energy:300µJ (on), 70µJ (off)
  • Input Type:Standard
  • Gate Charge:97 nC
  • Td (on/off) @ 25°C:24ns/250ns
  • Test Condition:400V, 10A, 20Ohm, 15V
  • Reverse Recovery Time (trr):68 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Grade:-
  • Qualification:-

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IHW20N65R5XKSA1

Overview

The IHW20N65R5XKSA1 is a Reverse Conducting IGBT from the Resonant Switching Series, integrating an IGBT and a monolithic body diode in a PG-TO247-3 package. It features TRENCHSTOP™ technology with a collector-emitter voltage of 650 V and a DC collector current of 20 A at 100°C. The device exhibits low saturation voltage (1.35 V typ) and turn-off energy (0.16 mJ typ). It supports a maximum junction temperature of 175°C and includes an internal emitter inductance of 13 nH.

Feature Summary

  • Reverse conducting design with a powerful monolithic diode featuring low forward voltage
  • TRENCHSTOP™ technology providing tight parameter distribution and high ruggedness
  • Positive temperature coefficient in VCEsat enabling easy parallel switching capability
  • Optimized for resonant switching applications with very low EMI characteristics

Applications

  • Induction cooking systems
  • Inverterized microwave ovens
  • Resonant converters

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO247-3 package outline and H20ER5 marking code. Confirm that the product is suitable for industrial power control environments rather than automotive applications, as it lacks AEC-Q qualification.

Selection Notes

Select this component for designs requiring integrated reverse conduction to reduce external component count. The positive temperature coefficient of the saturation voltage facilitates safe parallel operation for higher current requirements. Consider the 175°C maximum junction temperature rating for thermal management strategies in high-efficiency resonant topologies.

Part Context

This part belongs to Infineon's Resonant Switching Series, specifically designed for soft-switching applications. It utilizes TRENCHSTOP™ technology to minimize switching losses and improve reliability. The integration of the diode within the same die simplifies circuit layout and reduces parasitic inductances compared to discrete solutions.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific monolithic diode characteristics or the precise switching energy values required for resonant converter stability.

FAQ

Does the IHW20N65R5XKSA1 include an internal gate resistor?

No, the electrical characteristics specify that the internal gate resistor (rG) is none.

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature (Tvj) is 175°C.

Is this component qualified for automotive applications?

No, the datasheet explicitly states that the product is not qualified according to AEC-Q100 or AEC-Q101 documents.

IHW20N65R5XKSA1IHW20N65R5XKSA1
$2.92
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