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The IHW25N120E1 is a reverse-conducting IGBT with a monolithic body diode from the Resonant Soft-Switching Series. It features TRENCHSTOP technology, offering low VCEsat and easy parallel switching capability due to a positive temperature coefficient in VCEsat. The device is designed for soft commutation only. Key parameters include a collector-emitter voltage of 1200V, a continuous collector current of 25A at 100°C case temperature, and a maximum junction temperature of 150°C. It utilizes a PG-TO247-3 package.
Verify the specific ordering suffix (e.g., XKSA1) against official Infineon documentation to confirm exact packaging and marking details. Confirm that the application strictly adheres to soft-switching requirements, as the integrated diode is designed for this purpose only. Ensure thermal management supports the specified maximum junction temperature limits during operation.
Select this component for resonant converter designs requiring integrated freewheeling functionality without external diodes. Consider the 1200V rating and 25A continuous current capabilities at elevated temperatures. Evaluate gate drive requirements based on the internal gate resistor value and ensure compatibility with soft-switching topologies to maximize efficiency and device longevity.
This device belongs to Infineon's Resonant Soft-Switching Series, specifically utilizing TRENCHSTOP technology. It is a single N-channel IGBT with an integrated anti-parallel diode in a TO-247-3 package. The product line focuses on industrial power control applications where low switching losses and robust performance under resonant conditions are critical.
Check for updated revisions within the same series or alternative part numbers with similar electrical ratings and package dimensions. Verify if newer generations offer improved thermal resistance or switching characteristics while maintaining pin compatibility.