ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 60A TO247-3
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 30A
- Power - Max：330 W
- Switching Energy：1.1mJ (off)
- Input Type：Standard
- Gate Charge：235 nC
- Td (on/off) @ 25°C：-/330ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
Download product information
Overview
The IHW30N120R5XKSA1 is a Reverse Conducting IGBT with monolithic body diode from the Resonant Switching Series. It utilizes TRENCHSTOPTM technology for tight parameter distribution and high ruggedness. Key electrical parameters include a collector-emitter voltage (VCE) of 1200 V, DC collector current (IC) of 30 A at Tc=100°C, and saturation voltage (VCEsat) of 1.55 V at Tvj=25°C. The device operates up to a maximum junction temperature (Tvjmax) of 175°C and features low EMI characteristics.
Feature Summary
- Features a powerful monolithic body diode with low forward voltage designed for soft commutation
- Utilizes TRENCHSTOPTM technology offering positive temperature coefficient in VCEsat for easy parallel switching capability
- Provides low electromagnetic interference (EMI) performance
Applications
- Induction cooking
- Microwave ovens
Procurement Notes
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance status. Ensure the component matches the PG-TO247-3 package drawing. Confirm that the application does not require automotive qualification, as this product is explicitly stated as not qualified according to AEC-Q100 or AEC-Q101 standards.
Selection Notes
Select this component for resonant switching applications requiring high reliability and temperature-stable behavior. Consider the 1200 V rating and 30 A continuous current capacity at elevated case temperatures. Evaluate the soft switching energy loss characteristics if operating under dv/dt conditions. Verify thermal management requirements against the specified junction-to-case thermal resistance.
Part Context
This part belongs to Infineon's Resonant Switching Series of Reverse Conducting IGBTs. It integrates an IGBT switch and a freewheeling diode in a single package. The series is optimized for soft switching behavior to reduce filtering requirements and system costs in high ambient temperature environments.
Replacement Considerations
Consult official Infineon replacement guides for direct substitutes within the same series. Verify pinout compatibility and thermal resistance values when considering alternative packages.
