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The IHW30N135R3FKSA1 is a reverse-conducting Insulated Gate Bipolar Transistor (RC-IGBT) from Infineon Technologies, utilizing TRENCHSTOP technology. It integrates an IGBT and a monolithic body diode in a single TO-247-3 package. Key electrical parameters include a collector-emitter voltage of 1350 V and a continuous collector current of 30 A. The device supports a maximum power dissipation of 175 W and operates within a junction temperature range of -40°C to +175°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix 'FKSA1' matches the required tape-and-reel or tube packaging configuration. Ensure all handling procedures comply with electrostatic discharge (ESD) protection standards during storage and assembly.
Select this RC-IGBT when a compact solution combining switching and freewheeling functions is required. The 1350 V rating suits high-voltage industrial applications. Consider thermal management requirements due to the 175 W dissipation limit. Verify compatibility with gate drive voltages and switching frequency constraints relative to similar TRENCHSTOP variants.
This component belongs to Infineon's TRENCHSTOP family of IGBTs. It is designed for medium-power applications requiring high efficiency and reliability. The reverse-conducting feature eliminates the need for external anti-parallel diodes, reducing board space and parasitic inductance compared to standard IGBT configurations.
Note: Scheduled for obsolescence by the manufacturer. Evaluate alternative RC-IGBTs from the same TRENCHSTOP series with compatible voltage and current ratings for long-term supply continuity.