IHW30N60TFKSA1

Overview

The IHW30N60TFKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a silicon construction housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A. Key electrical parameters include a saturation voltage of 1.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 187 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

• Utilizes Trench Field Stop technology for optimized switching performance
• Designed for low loss applications with high thermal stability
• Single configuration suitable for robust power switching circuits

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix KSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards. Confirm that the TO-247-3 pinout matches the target PCB layout requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 600V blocking capability with a 60A continuous current rating. The 1.5V saturation voltage indicates suitability for efficiency-critical applications. Ensure the thermal management system can handle the 187W dissipation limit at the expected ambient temperature conditions within the specified operating range.

Part Context

This part belongs to the Trench Field Stop IGBT family from Infineon Technologies. It represents an evolution in silicon-based power switching devices, offering improved performance over standard trench technologies. The TO-247-3 package provides a balance between current handling capacity and thermal resistance for medium-power industrial applications.

Replacement Considerations

IKW30N60TFKSA1