IHW40N135R5XKSA1

$4.66

Description：IGBT TRENCH FS 1350V 80A TO247-3
Series：TrenchStop™

SKU:59a65f67e308 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1350V 80A TO247-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1350 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 40A
Power - Max：394 W
Switching Energy：2mJ (off)
Input Type：Standard
Gate Charge：305 nC
Td (on/off) @ 25°C：-/410ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IHW40N135R5XKSA1

Overview

The IHW40N135R5XKSA1 is a single Reverse Conducting IGBT from the Resonant Switching Series, utilizing TRENCHSTOP technology. It features a monolithic body diode and is housed in a PG-TO247-3 package. Key electrical parameters include a collector-emitter voltage of 1350 V, a continuous collector current of 40 A at 100°C case temperature, and a saturation voltage of 1.65 V at 25°C. The device supports an operating junction temperature up to 175°C with a maximum power dissipation of 394 W at 25°C.

Feature Summary

Features a powerful monolithic body diode designed for soft commutation with low forward voltage.
Utilizes TRENCHSTOP technology for tight parameter distribution, high ruggedness, and easy parallel switching capability.
Designed for low electromagnetic interference (EMI) generation during operation.

Applications

Induction cooking appliances
Microwave ovens

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure that the component is suitable for non-automotive applications, as it lacks AEC-Q100 qualification. Confirm thermal management requirements align with the specified junction-to-case resistance values provided in the datasheet.

Selection Notes

Select this component for resonant switching topologies requiring high voltage blocking and integrated reverse conduction. Consider the positive temperature coefficient of VCEsat when designing circuits requiring parallel operation. Evaluate the soft switching energy loss characteristics if the application involves dv/dt controlled turn-off conditions to optimize efficiency.

Part Context

This part belongs to Infineon's Resonant Switching Series of Reverse Conducting IGBTs. It integrates the IGBT and diode functions into a single silicon die, reducing component count compared to discrete solutions. The TRENCHSTOP technology ensures stable behavior across the operating temperature range.