SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IHW40N60RFFKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP™ technology. It features a 600 V collector-emax voltage rating and an 80 A continuous collector current at 25°C. The device operates within a junction temperature range of -40°C to +175°C and dissipates up to 305 W of power. Packaged in a TO-247-3 through-hole configuration, it includes a built-in fast recovery diode.
Verify the specific suffix 'FF' against official documentation to confirm exact electrical characteristics, as variations exist within the series. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component meets all required thermal management specifications for the intended application environment before finalizing procurement.
Select this component for applications requiring high current handling and robust thermal performance in a standard through-hole package. Consider the integrated diode's reverse recovery characteristics when designing circuits sensitive to switching losses. Evaluate the trade-off between conduction losses and switching speed inherent to the TRENCHSTOP architecture relative to alternative technologies.
This part belongs to Infineon's IHW series of IGBTs, designed for general industrial applications. It represents a mature product line offering reliable performance for medium-power switching tasks. The TO-247-3 package provides a balance between current capacity and ease of mounting on heatsinks for various power electronics designs.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official replacement guides or contact Infineon technical support for validated cross-references based on specific circuit requirements.