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Product Detailed Parameters
- Description：IGBT 650V 80A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 40A
- Power - Max：230 W
- Switching Energy：630µJ (on), 140µJ (off)
- Input Type：Standard
- Gate Charge：193 nC
- Td (on/off) @ 25°C：30ns/258ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
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Overview
The IHW40N65R5 is a reverse-conducting IGBT with a monolithic body diode from the Resonant-Switching Series. It features TRENCHSTOP technology for low VCEsat and Eoff, ensuring high ruggedness and stable temperature behavior. The device operates at 650V collector-emitter voltage and supports up to 80A DC collector current at 25°C case temperature. It utilizes a PG-TO247-3 package and offers excellent parallel switching capability due to a positive temperature coefficient in VCEsat.
Feature Summary
- Powerful monolithic reverse-conducting diode with low forward voltage
- TRENCHSTOP technology providing very tight parameter distribution and high ruggedness
- Low EMI characteristics suitable for resonant applications
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
Applications
- Induction cooking
- Inverterized microwave ovens
- Resonant converters
Procurement Notes
Verify the component against the official Infineon datasheet revision 2.3 dated 2015-12-22. Confirm that the ordering suffix XKSA1 corresponds to the standard tube packaging format specified in the manufacturer's documentation. Ensure compliance with RoHS standards and Pb-free lead plating requirements as stated in the product specifications.
Selection Notes
Select this component for applications requiring resonant switching behavior and soft switching capabilities. The integrated diode eliminates the need for external anti-parallel diodes, simplifying circuit design. Consider the thermal resistance values and maximum junction temperature limits when designing heat dissipation solutions for continuous operation.
Part Context
This part belongs to Infineon's Resonant-Switching Series of Reverse-Conducting IGBTs. These devices are engineered for high efficiency and reliability in induction heating applications. The series combines an IGBT and a fast recovery diode in a single package to reduce power dissipation and improve system performance.
Replacement Considerations
Check for direct substitutes within the same TRENCHSTOP 5 or RC-H families. Verify pinout compatibility and electrical ratings before substitution. Consult the official replacement matrix for cross-referencing options.
