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Product Detailed Parameters
- Description：IGBT 650V 83A TO247-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：83 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 40A
- Power - Max：210 W
- Switching Energy：1.1mJ (on), 420µJ (off)
- Input Type：Standard
- Gate Charge：159 nC
- Td (on/off) @ 25°C：17ns/211ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：99 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
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Overview
The IHW40N65R6XKSA1 is a reverse-conducting IGBT manufactured by Infineon Technologies, featuring a monolithic body diode in a PG-TO247-3 package. It operates with a collector-emitter voltage of 650 V and supports a DC collector current of 83 A at 25 °C case temperature. The device exhibits a typical collector-emitter saturation voltage of 1.29 V at 25 °C junction temperature. Power dissipation reaches 210 W at 25 °C case temperature. The integrated diode handles a forward current of 35 A at 25 °C case temperature with a typical forward voltage of 1.50 V.
Feature Summary
- Positive temperature coefficient in VCEsat enables easy parallel switching capability.
- Monolithic reverse-conducting diode provides low forward voltage for efficient operation.
- Designed for high ruggedness and stable temperature behavior under varying conditions.
- Optimized for low electromagnetic interference (EMI) generation.
Applications
- Induction cooking systems
- Microwave ovens
Procurement Notes
Verify the specific ordering suffix XKSA1 to confirm RoHS compliance and lead-free plating status as documented. Confirm that the component meets industrial application validation standards per JEDEC47/20/22 requirements. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the Infineon product.
Selection Notes
Select this component for applications requiring integrated reverse conduction to simplify circuit topology. Consider the thermal resistance values when designing heat sinks for continuous operation. Evaluate the soft turn-off energy characteristics if operating in resonant or soft-switching environments to minimize switching losses and EMI.
Part Context
This part belongs to Infineon's TRENCHSTOP™ RC-H family of reverse-conducting IGBTs. These devices are engineered for high efficiency and reliability in induction heating applications. The technology combines low switching and conduction losses with improved thermal performance to reduce overall system costs and filtering requirements.
Replacement Considerations
No official substitutes are listed in the datasheet. When evaluating alternatives, verify compatibility with TO-247-3 packaging and matching electrical ratings for 650 V operation. Ensure the replacement device offers similar reverse-conducting diode characteristics and thermal resistance profiles for direct integration.
