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The Infineon Technologies IHY30N160R2 is a TrenchStop® Reverse Conducting (RC-)IGBT featuring a monolithic body diode. It utilizes NPT technology for positive temperature coefficient behavior in VCE(sat), facilitating easy parallel switching. The device operates with a collector-emitter voltage of 1600V and a continuous DC collector current of 30A at 100°C case temperature. It is housed in the PG-TO247HC-3 package, which provides increased air and creepage distances compared to standard TO-247 packages.
Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm that the package matches the PG-TO247HC-3 designation. Ensure compliance with RoHS and halogen-free requirements as stated in the product documentation before integration into final assemblies.
Select this component for designs requiring high-voltage handling up to 1600V with integrated reverse conduction capabilities. The PG-TO247HC-3 package is suitable for applications demanding enhanced insulation distances. Consider the thermal resistance characteristics when designing heat sinks for sustained operation at elevated junction temperatures.
This part belongs to the Soft Switching Series within Infineon's power semiconductor portfolio. It represents an evolution in IGBT technology by combining the efficiency of TrenchStop design with the convenience of a reverse-conducting configuration, reducing component count in specific circuit topologies.
Direct substitutes are not explicitly listed in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers or different series from Infineon.
The maximum collector-emitter voltage (VCE) is rated at 1600V.
No, the integrated gate resistor (RGint) is specified as none in the electrical characteristics.
It uses the PG-TO247HC-3 package, which offers increased air and creepage distances compared to the standard TO-247 package.