IKA08N65ET6XKSA1

$0.97

Description：IGBT TRENCH FS 650V 11A TO220-3
Series：TrenchStop™

SKU:c538c0cb89c4 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 11A TO220-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：11:00 AM
Current - Collector Pulsed (Icm)：25 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 5A
Power - Max：33 W
Switching Energy：110µJ (on), 40µJ (off)
Input Type：Standard
Gate Charge：17 nC
Td (on/off) @ 25°C：20ns/59ns
Test Condition：400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)：43 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：PG-TO220-3-FP
Grade：-
Qualification：-

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IKA08N65ET6XKSA1

Overview

The IKA08N65ET6 is a TRENCHSTOP™ IGBT6 single switch with an integrated antiparallel Rapid diode in a PG-TO220-3 FP package. It features a collector-emitter voltage of 650 V, a continuous collector current of 16 A at 25°C, and a typical saturation voltage of 1.5 V. The device supports a maximum junction temperature of 175°C and offers a short-circuit withstand time of 3 µs.

Feature Summary

Integrates a soft, fast recovery antiparallel Rapid diode for efficient commutation.
Provides high ruggedness and stable behavior across varying temperatures.
Features very tight parameter distribution for consistent performance.
Delivers low gate charge to facilitate easier driver design.

Applications

General purpose drives (GPD)
Air conditioning systems
Major home appliances

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm that the component meets industrial qualification standards per JEDEC47/20/22. Ensure the application does not require automotive certification, as this part lacks AEC-Q101 compliance.

Selection Notes

Select this component for applications requiring robust thermal stability and low conduction losses. The positive temperature coefficient aids in parallel operation. Verify that the required switching frequency aligns with the device's energy loss characteristics. Ensure the gate drive circuitry matches the specified threshold and charge requirements.

Part Context

This device belongs to the TRENCHSTOP™ IGBT6 family, designed for general-purpose power switching. It combines trench technology with field-stop structures to optimize on-state voltage and switching performance. The integration of the Rapid diode reduces reverse recovery losses compared to standard fast recovery diodes.

Replacement Considerations

Check datasheets for alternative IGBTs with similar 650V ratings and TO-220 packages. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets or exceeds the required short-circuit withstand time and junction temperature limits.