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The IKA08N65F5XKSA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the TRENCHSTOP 5 F5 series, manufactured by Infineon Technologies. It features a TO-220-3 FP through-hole package with an isolated mounting tab. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 10.8 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 31.2 W. It operates within a temperature range of -40°C to +175°C.
Verify the specific suffix XKSA1 against official datasheets to confirm packaging details and compliance status. Confirm availability as distribution channels may list engineering samples or obsolete stock. Ensure the procurement source provides valid RoHS documentation matching the component's environmental specifications.
Select this component for applications requiring moderate current handling up to 10.8 A with high voltage blocking capabilities. The TO-220-3 FP package is suitable for designs needing reliable thermal isolation between the collector and heatsink. Consider the 1.6 V saturation voltage for efficiency requirements in low-to-medium power conversion circuits.
This part belongs to Infineon’s TRENCHSTOP 5 family, which integrates advanced trench gate technology with field-stop structures. The F5 designation indicates specific switching characteristics tailored for high-frequency operation. The component represents a discrete solution for power electronics where reliability and compact form factors are prioritized over module integration.
Direct replacements within the same series include IKA08N65F5. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' 650V TO-220-3 FP IGBTs.