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The IKA15N60TXKSA1 is a single Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ and Fieldstop technology for 600V applications. The device features a collector-emitter voltage of 600V and a continuous collector current of 18.3A at 25°C case temperature. It operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a typical saturation voltage of 1.5V, a gate charge of 87nC, and a short-circuit withstand time of 5µs.
Verify the component status as the base model IKA15N60T is listed as obsolete in some distributor records. Confirm availability through official Infineon channels or authorized distributors. Ensure the specific suffix matches the required packaging and compliance standards. Cross-reference datasheet revisions to confirm technical specifications align with design requirements before procurement.
Select this component for 600V applications requiring low conduction losses and high thermal stability. The PG-TO220-3 package suits through-hole mounting. Consider the 5µs short-circuit withstand capability for robust protection. Evaluate thermal resistance values against heat sink capabilities. Verify compatibility with standard gate drive voltages and currents for optimal switching performance.
This part belongs to the Infineon TRENCHSTOP™ Series, designed for efficient power switching. It combines an IGBT with a fast-recovery diode in a single package. The series emphasizes low loss and high reliability for industrial and consumer power electronics. The PG-TO220-3 package provides a balance of thermal performance and mechanical simplicity.
Public confirmed substitute: IKA15N60T.