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The IKB10N60TATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ series, utilizing Fieldstop technology. It features an integrated anti-parallel Emitter Controlled HE diode within a PG-TO263-3 (D2PAK-3) surface-mount package. Key electrical parameters include a collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C case temperature. The device exhibits a typical collector-emitter saturation voltage of 1.5 V at 25°C and supports a maximum junction temperature of 175°C.
Verify the specific ordering suffix ATMA1 against official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component meets all relevant environmental compliance standards required for the target application before finalizing procurement orders.
Select this component for applications requiring low conduction losses and high ruggedness in the 600V range. Consider the thermal resistance values and power dissipation limits relative to the expected operating case temperatures. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance.
This part belongs to the TRENCHSTOP™ Series p family, which combines IGBT and Fieldstop technologies. The IKB10N60T variant specifically denotes the through-hole or standard leaded version, while the ATMA1 suffix indicates the surface-mount PG-TO263-3 package configuration designed for automated assembly processes.
IKB10N60T