IKB15N65EH5ATMA1

$3.05

Description：IGBT TRENCH FS 650V 30A TO263-3
Series：TrenchStop™ 5

SKU:446fcc111343 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 30A TO263-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 15A
Power - Max：105 W
Switching Energy：400µJ (on), 80µJ (off)
Input Type：Standard
Gate Charge：38 nC
Td (on/off) @ 25°C：16ns/145ns
Test Condition：400V, 15A, 39Ohm, 15V
Reverse Recovery Time (trr)：70 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3
Grade：-
Qualification：-

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IKB15N65EH5ATMA1

Overview

The IKB15N65EH5ATMA1 is a single N-channel IGBT from Infineon's High Speed Fifth Generation TRENCHSTOP series, copacked with a full-rated current RAPID 1 anti-parallel diode. It features a PG-TO263-3 package and supports a maximum junction temperature of 175°C. Key electrical parameters include a collector-emitter voltage (VCE) of 650 V, a continuous DC collector current (IC) of 30 A at 25°C case temperature, and a collector-emitter saturation voltage (VCEsat) of 1.65 V at 25°C. The device is Pb-free lead-plated and RoHS compliant.

Feature Summary

High-speed H5 technology optimized for best-in-class efficiency in hard switching and resonant topologies.
Integrated full-rated current RAPID 1 fast anti-parallel diode for complete switching performance.
Maximum junction temperature rating of 175°C for enhanced thermal operation capability.

Applications

Solar String Inverter
Solar Micro Inverter
Industrial SMPS
Welding
Energy Storage

Procurement Notes

Verify the specific suffix ATMA1 to confirm reel packaging and tape-and-reel quantity specifications. Confirm JEDEC47/20/22 industrial validation status against project requirements. Ensure gate drive circuits accommodate the specified transient gate-emitter voltage limits during procurement planning.

Selection Notes

Select this component for applications requiring high switching speeds and low gate charge within a surface-mount TO-263 form factor. Consider the integrated RAPID 1 diode characteristics when designing snubber circuits or evaluating reverse recovery losses. Verify that the PCB footprint matches the PG-TO263-3 package dimensions for proper thermal and mechanical integration.

Part Context

This part belongs to Infineon's TRENCHSTOP 5 family, designed for industrial power supplies and energy generation systems. It utilizes silicon technology to provide a balance between conduction losses and switching speed. The copackaged diode eliminates the need for external parallel components, simplifying the bill of materials and reducing parasitic inductance in the circuit layout.

Replacement Considerations

Consult official Infineon documentation for qualified cross-reference part numbers. Verify pinout compatibility and thermal resistance values before substituting with other manufacturers' devices.