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The IKB20N65EH5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ 5 series. It features a PG-TO263-3 package with an integrated anti-parallel diode. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 38 A at 25°C, derating to 25 A at 100°C. The device supports a maximum power dissipation of 125 W and operates within a junction temperature range of -40°C to +175°C.
Verify the specific suffix ATMA1 against official datasheets to confirm packaging type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm that the PG-TO263-3 footprint matches your PCB design constraints before finalizing procurement.
Select this component when a single IGBT with an integrated freewheeling diode is required in a surface-mount TO-263 package. It is suitable for designs needing 650 V blocking capability with moderate current handling up to 38 A. Consider thermal management capabilities as the power dissipation is limited to 125 W. Evaluate gate charge characteristics for driver compatibility in high-speed switching circuits.
This device belongs to the TRENCHSTOP™ 5 family, representing Infineon's fifth-generation IGBT technology. It is designed to replace older generations like TRENCHSTOP™ 4 in applications requiring improved efficiency. The PG-TO263-3 package allows for direct mounting on printed circuit boards, facilitating compact converter designs compared to through-hole alternatives.
Direct replacements may include IKB20N65EH5 or AIKB20N65DH5, provided pinout and thermal characteristics are verified. Always consult the latest datasheet to ensure functional equivalence regarding switching speeds and voltage ratings.