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The IKD04N60R is a silicon-based Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the TrenchStop RC family. It features a monolithic integrated anti-parallel diode and is housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and operates within a junction temperature range of -40 °C to +175 °C.
Verify the specific suffix code against official documentation to confirm exact electrical characteristics and packaging options. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the component meets all environmental operating limits defined in the datasheet for your specific application scenario.
Select this component for designs requiring a compact SMD solution with integrated freewheeling capability. Consider the trade-off between saturation voltage and switching speed inherent to the RC architecture. Verify that the thermal resistance of the TO-252-3 package aligns with the system's heat dissipation requirements under expected load conditions.
This part belongs to Infineon's TrenchStop RC series, which combines IGBT and diode technologies for resonant applications. It serves as a discrete alternative to modules in medium-power circuits. The TO-252-3 package facilitates automated surface-mount assembly while providing adequate thermal management for moderate current levels.
Check for direct pin-compatible substitutes within the same TrenchStop RC family. Verify equivalent voltage ratings, current capabilities, and switching times before substituting. Ensure any replacement maintains the required thermal and mechanical specifications for the existing footprint.