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The IKD06N65ET6 is a TRENCHSTOP™ IGBT6 device in trench and field-stop technology with a soft, fast recovery anti-parallel Rapid diode. It features a collector-emitter voltage of 650 V and a DC collector current of 9.0 A at 25°C case temperature. The typical saturation voltage is 1.5 V, and the maximum junction temperature is 175°C. The short circuit withstand time is 3 µs. It utilizes PG-TO252-3 packaging.
Verify the specific ordering suffix ARMA1 against official Infineon documentation to confirm tape and reel packaging details. Ensure compliance with RoHS standards and lead-free plating requirements. Confirm JEDEC qualification status for industrial applications before procurement.
Select this component for low-voltage switching applications requiring high thermal stability. The positive temperature coefficient aids in parallel operation. Verify that the 650 V rating and 9.0 A continuous current capability meet the system's peak and RMS load requirements under the intended operating temperature conditions.
This device belongs to the TRENCHSTOP™ IGBT6 family from Infineon Technologies. It integrates an IGBT chip with a dedicated anti-parallel diode in a single TO-252 package. The technology focuses on reducing conduction losses while maintaining robust short-circuit handling capabilities for industrial power electronics.
Check datasheets for pinout compatibility and electrical parameter overlaps. Verify thermal resistance values and package dimensions to ensure mechanical fit. Confirm that the replacement device meets or exceeds the 650 V blocking voltage and 175°C junction temperature limits.
The short circuit withstand time is 3 µs at a junction temperature of 150°C.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The typical forward voltage (VF) is 1.36 V at a junction temperature of 25°C and a forward current of 3.0 A.