IKD06N65ET6ARMA1

IKD06N65ET6ARMA1

$2.31
  • Description:IGBT TRENCH FS 650V 9A TO252-3
  • Series:TrenchStop™

SKU:da31668cee20 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 9A TO252-3
  • Series:TrenchStop™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):9:00 AM
  • Current - Collector Pulsed (Icm):18 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 3A
  • Power - Max:31 W
  • Switching Energy:60µJ (on), 30µJ (off)
  • Input Type:Standard
  • Gate Charge:13.7 nC
  • Td (on/off) @ 25°C:15ns/35ns
  • Test Condition:400V, 3A, 47Ohm, 15V
  • Reverse Recovery Time (trr):30 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3
  • Grade:-
  • Qualification:-

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IKD06N65ET6ARMA1

Overview

The IKD06N65ET6 is a TRENCHSTOP™ IGBT6 device in trench and field-stop technology with a soft, fast recovery anti-parallel Rapid diode. It features a collector-emitter voltage of 650 V and a DC collector current of 9.0 A at 25°C case temperature. The typical saturation voltage is 1.5 V, and the maximum junction temperature is 175°C. The short circuit withstand time is 3 µs. It utilizes PG-TO252-3 packaging.

Feature Summary

  • Trench and field-stop technology for tight parameter distribution and high ruggedness
  • Positive temperature coefficient for stable behavior
  • Soft, fast recovery anti-parallel Rapid diode
  • Low gate charge

Applications

  • General purpose drives
  • Air conditioning
  • Major home appliances
  • Small home appliances

Procurement Notes

Verify the specific ordering suffix ARMA1 against official Infineon documentation to confirm tape and reel packaging details. Ensure compliance with RoHS standards and lead-free plating requirements. Confirm JEDEC qualification status for industrial applications before procurement.

Selection Notes

Select this component for low-voltage switching applications requiring high thermal stability. The positive temperature coefficient aids in parallel operation. Verify that the 650 V rating and 9.0 A continuous current capability meet the system's peak and RMS load requirements under the intended operating temperature conditions.

Part Context

This device belongs to the TRENCHSTOP™ IGBT6 family from Infineon Technologies. It integrates an IGBT chip with a dedicated anti-parallel diode in a single TO-252 package. The technology focuses on reducing conduction losses while maintaining robust short-circuit handling capabilities for industrial power electronics.

Replacement Considerations

Check datasheets for pinout compatibility and electrical parameter overlaps. Verify thermal resistance values and package dimensions to ensure mechanical fit. Confirm that the replacement device meets or exceeds the 650 V blocking voltage and 175°C junction temperature limits.

FAQ

What is the short circuit withstand time?

The short circuit withstand time is 3 µs at a junction temperature of 150°C.

Is this device qualified for automotive applications?

No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

What is the typical forward voltage of the integrated diode?

The typical forward voltage (VF) is 1.36 V at a junction temperature of 25°C and a forward current of 3.0 A.

IKD06N65ET6ARMA1IKD06N65ET6ARMA1
$2.31
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