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The IKD10N60R is a silicon-based single IGBT from the Trenchstop RC series, housed in a TO-252-3 (DPAK) surface-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.65 V and supports a power dissipation of 150 W. Operating temperatures range from -40°C to +175°C, with a gate-emitter voltage limit of ±20 V.
Verify the exact suffix designation against official Infineon documentation, as generic model references often omit critical tape-and-reel or cut-tape identifiers. Confirm current lifecycle status, as specific variants may be subject to discontinuation or recommended non-new-designation notices. Ensure compatibility with existing PCB footprints for the TO-252-3 package before finalizing procurement orders.
Select this component when a compact solution combining switching and freewheeling functions is required. The low saturation voltage aids efficiency in moderate frequency applications. Evaluate thermal management requirements carefully, as the DPAK package limits heat dissipation compared to larger through-hole alternatives. Verify that the 600V rating aligns with the peak voltage stresses of the target circuit design.
This part belongs to Infineon's Trenchstop RC discrete family, which integrates IGBTs with anti-parallel diodes. These components are engineered for high-efficiency power conversion where space constraints and switching speed are critical. The TO-252-3 package provides a balance between thermal performance and surface-mount convenience for automated assembly processes.
Direct substitutes include IKD10N60RF and IKD10N60RAATMA2. Verify electrical parameters such as saturation voltage and switching times match the original design requirements before substitution.