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The IKD15N60RATMA1 is a 600V TRENCHSTOPTM Reverse Conducting IGBT with an integrated diode, designed for hard switching applications. It operates in the PG-TO252-3 package and supports a maximum junction temperature of 175°C. The device provides a DC collector current of 30A at 25°C and 15A at 100°C, with a pulsed current capability of 45A. Key electrical parameters include a collector-emitter saturation voltage of 1.65V at 25°C and a diode forward voltage of 1.70V at 25°C. Switching energy losses are 0.37mJ (Eon) and 0.53mJ (Eoff) at 25°C under standard test conditions.
Verify the exact ordering suffix against Infineon's official documentation to confirm packaging details and specific manufacturing lot requirements. Ensure that the procurement channel sources genuine Infineon Technologies products to maintain compliance with JEDEC qualification standards and RoHS directives. Cross-reference datasheet revision V2.4 for accurate thermal and electrical specifications prior to finalizing orders.
Select this component for designs requiring high current density within a compact surface-mount footprint. The integrated diode simplifies circuit topology by removing the requirement for separate freewheeling diodes. Evaluate thermal management strategies carefully, as the device supports up to 175°C junction temperatures but requires adequate PCB copper area or heatsinking to manage power dissipation effectively during continuous operation.
This part belongs to the IKD15N60R series, which utilizes TRENCHSTOPTM technology for 600V applications. It is specifically engineered for hard switching environments where minimizing electromagnetic interference and conduction losses is critical. The product spectrum includes various packages, with this model utilizing the PG-TO252-3 form factor to balance performance and board space efficiency.
Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 600V rating, 15A/30A current capabilities, and PG-TO252-3 package dimensions. Verify that alternative devices support similar short-circuit withstand times and reverse recovery characteristics to ensure system compatibility without redesign.
The device has a short-circuit withstand time of 5µs when VGE is 15.0V and VCC is less than or equal to 400V.
No, the device features an integrated anti-parallel diode, eliminating the need for external freewheeling diodes in the circuit design.
The operating junction temperature range is from -40°C to +175°C.