IKD15N60RBTMA1

Overview

The IKD15N60RBTMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, featuring an integrated freewheeling diode. It utilizes Trenchstop RC technology for optimized switching performance. The device is housed in a surface-mount PG-TO252-3 package with three pins. Key electrical specifications include a collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. The saturation voltage is specified at 1.65 V, with a power dissipation rating of 250 W. Operating temperatures range from -40°C to +175°C.

Feature Summary

• Integrates a reverse-conducting IGBT with a monolithic freewheeling diode to reduce component count and parasitic inductance.
• Employs Trenchstop RC technology to achieve low conduction losses and fast switching characteristics.
• Designed for robust thermal performance within the PG-TO252-3 surface-mount package.

Applications

• Motor drive inverters
• Switched-mode power supplies (SMPS)
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix against the official Infineon datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the procurement channel provides valid traceability documentation for automotive-grade components.

Selection Notes

Select this component when a compact solution combining an IGBT switch and a freewheeling diode is required. Consider the 600V blocking capability and 30A current rating for medium-power applications. Evaluate the thermal resistance of the PG-TO252-3 package against the expected heat dissipation requirements of the target circuit design.

Part Context

This part belongs to Infineon's Trenchstop family, which focuses on efficiency improvements through advanced trench gate structures. The 'RC' designation indicates the integration of a reverse-conducting diode, distinguishing it from standard IGBTs that require external diodes. This configuration simplifies circuit topology and improves reliability in high-frequency switching environments.

Replacement Considerations

Direct substitutes may include other Infineon Trenchstop RC IGBTs in similar packages, such as the IKD15N60RATMA1, provided pinout and electrical parameters match. Cross-reference with competitor parts offering equivalent 600V/30A ratings in TO-252 packages if supply constraints exist.

FAQ

What technology does the IKD15N60RBTMA1 utilize?

It utilizes Infineon's Trenchstop RC technology, which combines a trench-gate IGBT with an integrated anti-parallel diode.

Is the IKD15N60RBTMA1 available in a through-hole package?

No, the IKD15N60RBTMA1 is specifically designed for surface mount installation in the PG-TO252-3 package.