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The IKFW50N65ES5 is a TRENCHSTOP 5 Advanced Isolation IGBT copacked with a full current rated RAPID 1 fast and soft antiparallel diode. It features high-speed S5 technology for hard and soft switching applications, offering a low VCEsat of 1.35V at nominal current and a breakdown voltage of 650V. The device has a maximum junction temperature of 175°C and utilizes a PG-HSIP247-3-2 package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure application requirements align with the industrial qualification standards defined in JEDEC47/20/22. Confirm thermal management capabilities match the specified junction-to-heatsink resistance values for optimal lifetime.
Select this component for designs requiring integrated fast recovery diodes within a single TO-247 footprint. The advanced isolation allows for direct heatsink mounting without additional insulators in many configurations. Evaluate gate resistor values to optimize switching energy losses based on the provided characteristic curves.
This part belongs to the TRENCHSTOP 5 family, designed as a plug-and-play replacement for previous generation IGBTs. It combines silicon IGBT technology with optimized diode characteristics to reduce system complexity and improve efficiency in medium-power conversion circuits.
IKW50N65ES5
The maximum operating junction temperature (Tvj) is 175°C.
No, the product is not qualified according to AEC Q100 or AEC Q101 documents and is intended for industrial applications.
It is copacked with a full current rated RAPID 1 fast and soft antiparallel diode.